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Descr: . Electronic Components Datasheets Active components Transistors ST std3nk80z_std3nk80z-1_stf3nk80z_stp3nk80z.pdf
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STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESHTM Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V < 4.5 2.5 A 3 2 STF3NK80Z 800 V < 4.5 2.5 A TO-220FP 1 TO-220 STD3NK80Z 800 V < 4.5 2.5 A STD3NK80Z-1 800 V < 4.5 2.5 A Extremely high dv/dt capability 3 3 1 2 100% avalanche tested 1 DPAK Gate charge minimized IPAK Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Application D(2) Switching applications Description The SuperMESHTM series is obtained through an G(1) extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high S(3) voltage MOSFETs including revolutionary AM01476v1 MDmeshTM products. Table 1. Device summary Order codes Marking Package Packaging STP3NK80Z P3NK80Z TO-220 Tube STF3NK80Z F3NK80Z TO-220FP Tube STD3NK80ZT4 D3NK80Z DPAK Tape and reel STD3NK80Z-1 D3NK80Z IPAK Tube September 2009 Doc ID 9565 Rev 6 1/18 www.st.com 18 Contents

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